溶胶-凝胶法制备掺钕钛酸铋铁电薄膜及其性能  

Ferroelectric properties of Nd-doped Bi_4Ti_3O_(12) thin films prepared by sol-gel method

作　　者：王秀章[1] 戴志高[1] 刘美风[1] 晏伯武[2] 

机构地区：[1]湖北师范学院物理与电子科学学院,湖北黄石435002 [2]黄石理工学院计算机学院,湖北黄石435003

出　　处：《湖北师范学院学报（自然科学版）》2009年第2期6-9,共4页Journal of Hubei Normal University(Natural Science)

基　　金：国家自然科学基金资助项目(No.10874075);湖北省教育厅重点科技项目基金资助项目(No.D20082203);黄石市科技攻关计划项目基金资助项目(No.黄科技发成[2006]18)

摘　　要：采用溶胶-凝胶法在FTO/glass衬底上制备了Bi4Ti3O12和Bi3.35Nd0.65Ti3O12(BNT)薄膜,研究了Nd掺杂对Bi4Ti3O12薄膜的晶体结构、铁电性能和介电常数的影响.XRD研究表明Nd掺杂未对薄膜的结晶产生显著的影响。铁电性的测试表明,通过Nd掺杂,使薄膜的介电性和铁电性得到了增强,剩余极化强度由57.2μC/cm2增加到68.4μC/cm2.The Bi4Ti3O12 and Bi3.35Nd0.65 Ti3O12 thin films are prepared on the FTO/glass substrate using sol - gel method. The structures Au/Bi3.35 Nd0.65Ti3O12/FTO/glass and Au/Bi4Ti3O12/FTO/glass are fabricated. The effects of Nd doping on the microstructures, and ferroelectric properties of Bi4Ti3O12 films are investigated. XRD results showed that there is no substanfial effect to the crystallization of Bi4Ti3 O12 films by Nd doping. The results of ferroelectricity and dielectric property measurement show that the ferroelectricity and dielectric property are enhanced by Nd doping. Next, the remnant polarization is increased from 57.2 μC/cm^2 to 68.4 ^C/cm^2.

关 键 词：铁电性能 Bi_3.35Nd_0.65Ti_3O_12薄膜 Bi_4Ti_3O_12薄膜 溶胶一凝胶法 ND掺杂 

分 类 号：TN304[电子电信—物理电子学]