Si_2Sb_2Te_5 phase change material studied by an atomic force microscope nano-tip  

作　　者：刘彦伯 张挺 钮晓鸣 宋志棠 闵国全 张静 周伟民 万永中 张剑平 李小丽 封松林 

机构地区：[1]Laboratory of Nano-Technology, Shanghai Nanotechnology Promotion Center [2]State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystemand Information Technology, Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2009年第6期34-37,共4页半导体学报（英文版）

基　　金：supported by the State Key Development Program for Basic Research of China (Nos. 2007CB935400, 2006CB302700);the National High Technology Research and Development Program of China (Nos. 2008AA031402, 2006AA03Z360);the Science and Technology Council of Shanghai (Nos. 0652nm052, 0752nm013, 0752nm014, 07QA14065, 07SA08);the Shanghai Postdoctoral Scientific Foundation (No. 07R214204);the China Postdoctoral Scientific Foundation (No. 20070420105);the National Natural Science Foundation of China (No. 60776058);the Chinese Academy of Sciences (No. 083YQA1001)

摘　　要：The Si2Sb2Te5 phase change material has been studied by applying a nano-tip（30 nm in diameter） on an atomic force microscopy system.Memory switching from a high resistance state to a low resistance state has been achieved,with a resistance change of about 1000 times.In a typical I-V curve,the current increases significantly after the voltage exceeds～4.3 V.The phase transformation of a Si2Sb2Te5 film was studied in situ by means of in situ X-ray diffraction and temperature dependent resistance measurements.The thermal stability of Si2Sb2Te5 and Ge2Sb2Te5 was characterized and compared as well.The Si2Sb2Te5 phase change material has been studied by applying a nano-tip（30 nm in diameter） on an atomic force microscopy system.Memory switching from a high resistance state to a low resistance state has been achieved,with a resistance change of about 1000 times.In a typical I-V curve,the current increases significantly after the voltage exceeds～4.3 V.The phase transformation of a Si2Sb2Te5 film was studied in situ by means of in situ X-ray diffraction and temperature dependent resistance measurements.The thermal stability of Si2Sb2Te5 and Ge2Sb2Te5 was characterized and compared as well.

关 键 词：phase change electrical probe storage Si2Sb2Te5 

分 类 号：O611.3[理学—无机化学]