机构地区:[1]Institute of Thin Films and Nano Materials, Department of Mathematics and Physics, Wuyi University [2]Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Institute of Photo-Electronics, Nankai University [3]Changchun Institute of Optics, Fine Mechanics & Physics, Chinese Academy of Sciences
出 处:《Journal of Semiconductors》2009年第6期42-47,共6页半导体学报(英文版)
基 金:supported by the National High Technology Research and Development Program of China(No.2004AA303570);the National Natural Science Foundation of China (No. 60437030)
摘 要:A P^+-nc-Si:H film(boron-doped nc-Si:H thin film) was used as a complex anode of an OLED.As an ideal candidate for the composite anode,the P^+-nc-Si:H thin film has a good conductivity with a high work function(- 5.7 eV) and outstanding optical properties of high reflectivity,transmission,and a very low absorption.As a result,the combination of the relatively high reflectivity of a P^+-nc-Si:H film/ITO complex anode with the very high reflectivity of an Al cathode could form a micro-cavity structure with a certain Q to improve the efficiency of the OLED fabricated on it.An RGB pixel generated by microcavity OLEDs is beneficial for both the reduction of the light loss and the improvement of the color purity and the efficiency.The small molecule Alq would be useful for the emitting light layer(EML) of the MOLED,and the P^+-nc-Si film would be used as a complex anode of the MOLED,whose configuration can be constructed as Glass/LTO/P^+-nc-Si:H/ITO/MoO3/NPB/Alq/LiF/Al.By adjusting the thickness of the organic layer NPB/Alq,the optical length of the microcavity and the REB colors of the device can be obtained.The peak wavelengths of an OLED are located at 486,550,and 608 nm,respectively.The CIE coordinates are(0.21,0.45),(0.33,0.63),and(0.54,0.54),and the full widths at half maximum(FWHM) are 35,32,and 39 nm for red,green,and blue,respectively.A P^+-nc-Si:H film(boron-doped nc-Si:H thin film) was used as a complex anode of an OLED.As an ideal candidate for the composite anode,the P^+-nc-Si:H thin film has a good conductivity with a high work function(- 5.7 eV) and outstanding optical properties of high reflectivity,transmission,and a very low absorption.As a result,the combination of the relatively high reflectivity of a P^+-nc-Si:H film/ITO complex anode with the very high reflectivity of an Al cathode could form a micro-cavity structure with a certain Q to improve the efficiency of the OLED fabricated on it.An RGB pixel generated by microcavity OLEDs is beneficial for both the reduction of the light loss and the improvement of the color purity and the efficiency.The small molecule Alq would be useful for the emitting light layer(EML) of the MOLED,and the P^+-nc-Si film would be used as a complex anode of the MOLED,whose configuration can be constructed as Glass/LTO/P^+-nc-Si:H/ITO/MoO3/NPB/Alq/LiF/Al.By adjusting the thickness of the organic layer NPB/Alq,the optical length of the microcavity and the REB colors of the device can be obtained.The peak wavelengths of an OLED are located at 486,550,and 608 nm,respectively.The CIE coordinates are(0.21,0.45),(0.33,0.63),and(0.54,0.54),and the full widths at half maximum(FWHM) are 35,32,and 39 nm for red,green,and blue,respectively.
关 键 词:P^+-nc-Si:H thin film organic light emitting display MICROCAVITY TRICOLOR
分 类 号:TN383.1[电子电信—物理电子学]
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