Reliability of AlGaInP light emitting diodes with an ITO current spreading layer  

作　　者：高伟 郭伟玲 朱彦旭 蒋文静 沈光地 

机构地区：[1]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology

出　　处：《Journal of Semiconductors》2009年第6期61-63,共3页半导体学报（英文版）

基　　金：supported by the the National High Technology Research and Development Program of China(Nos.2008AA03Z402,SQ200703Z431230);the Beijing National Science Foundation (No. 4092007);the Talent Promoting Education of Beijing, China (No. 05002015200504)

摘　　要：Three aging experiments were performed for AlGaInP light emitting diodes（LED） with or without indium tin oxide（ITO）,which is used as a current spreading layer.It was found that the voltage of the LED with an ITO film increased at a high current stressing,while there was little change for that of the LED without the ITO.The results of the LEDs with different thicknesses of the ITO film show that the LED with a thicker ITO has a higher reliability.The main reason for the voltage increase of the LED with the ITO film might be the current crowding in the ITO film around the P-type electrode.Three aging experiments were performed for AlGaInP light emitting diodes（LED） with or without indium tin oxide（ITO）,which is used as a current spreading layer.It was found that the voltage of the LED with an ITO film increased at a high current stressing,while there was little change for that of the LED without the ITO.The results of the LEDs with different thicknesses of the ITO film show that the LED with a thicker ITO has a higher reliability.The main reason for the voltage increase of the LED with the ITO film might be the current crowding in the ITO film around the P-type electrode.

关 键 词：indium tin oxide A1GaInP light-emitting diode RELIABILITY 

分 类 号：TN312.8[电子电信—物理电子学] TG146.15[一般工业技术—材料科学与工程]