Design and analysis of a highly-integrated CMOS power amplifier for RFID readers  

作　　者：高同强 张春 池保勇 王志华 

机构地区：[1]Department of Electronics, Tsinghua University [2]Institute of Microelectronics, Tsinghua University

出　　处：《Journal of Semiconductors》2009年第6期121-125,共5页半导体学报（英文版）

摘　　要：To implement a fully-integrated on-chip CMOS power amplifier（PA） for RFID readers,the resonant frequency of each matching network is derived in detail.The highlight of the design is the adoption of a bonding wire as the output-stage inductor.Compared with the on-chip inductors in a CMOS process,the merit of the bondwire inductor is its high quality factor,leading to a higher output power and efficiency.The disadvantage of the bondwire inductor is that it is hard to control.A highly integrated class-E PA is implemented with 0.18-μm CMOS process.It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm.The maximum power-added efficiency（PAE） is 32.1%.Also,the spectral performance of the PA is analyzed for the specified RFID protocol.To implement a fully-integrated on-chip CMOS power amplifier（PA） for RFID readers,the resonant frequency of each matching network is derived in detail.The highlight of the design is the adoption of a bonding wire as the output-stage inductor.Compared with the on-chip inductors in a CMOS process,the merit of the bondwire inductor is its high quality factor,leading to a higher output power and efficiency.The disadvantage of the bondwire inductor is that it is hard to control.A highly integrated class-E PA is implemented with 0.18-μm CMOS process.It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm.The maximum power-added efficiency（PAE） is 32.1%.Also,the spectral performance of the PA is analyzed for the specified RFID protocol.

关 键 词：CMOS power amplifier RFID reader matching network bonding wires 

分 类 号：TN722[电子电信—电路与系统] TP391.44[自动化与计算机技术—计算机应用技术]