Fast patterning and dry-etch of SiN_x for high resolution nanoimprint templates  

作　　者：疏珍 万景 陆冰睿 谢申奇 陈宜方 屈新萍 刘冉 

机构地区：[1]State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University [2]Micro and Nanotechnology Centre, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, OX11 0QX, UK

出　　处：《Journal of Semiconductors》2009年第6期138-141,共4页半导体学报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(No.2006AA03Z352);the Science and Technology Commission of Shanghai (No. 08QH14002);the Seed Funding for Key Project by Ministry of Education;the '985'Micro/Nanoelectronics Science and Technology Innovation Platform

摘　　要：We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography（EBL） and a dry etch technique on a SiNx substrate,intended for large area manufacturing.To this end,the highly sensitive chemically amplified resist（CAR）,NEB-22,with negative tone was used.The EBL process first defines the template pattern in NEB-22,which is then directly used as an etching mask in the subsequent reactive ion etching（RIE） on the SiNx to form the desired templates.The properties of both e-beam lithography and dry etch of NEB-22 were carefully studied,indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching mask.Nevertheless,our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography（EBL） and a dry etch technique on a SiNx substrate,intended for large area manufacturing.To this end,the highly sensitive chemically amplified resist（CAR）,NEB-22,with negative tone was used.The EBL process first defines the template pattern in NEB-22,which is then directly used as an etching mask in the subsequent reactive ion etching（RIE） on the SiNx to form the desired templates.The properties of both e-beam lithography and dry etch of NEB-22 were carefully studied,indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching mask.Nevertheless,our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.

关 键 词：SiNx templates NANOIMPRINT NEB-22 electron bean lithography reactive ion etch 

分 类 号：O613.72[理学—无机化学]