RTCVD 工艺制备 poly-Si 薄膜太阳电池的研究  

POLYCRYSTALLINE SILICON THIN FILMS AND SOLAR CELLS PREPARED BY RAPID THERMAL CVD

作　　者：赵玉文[1] 李仲明[1] 何少琪[1] 王文静[1] 寥显伯[2] 盛殊然[2] 邓礼生[2] 潘广勤[2] 

机构地区：[1]北京市太阳能研究所 [2]中国科学院半导体研究所国家表面物理实验室

出　　处：《太阳能学报》1998年第2期152-155,共4页Acta Energiae Solaris Sinica

摘　　要：报道了快速热化学气相沉积（ＲＴＣＶＤ）工艺制备多晶硅（ｐｏｌｙ－Ｓｉ）薄膜及电池的实验和结果。采用ＳｉＨ２Ｃｌ２作为原料气体，衬底温度为１０３０℃时，薄膜的生长速率为１０ｎｍ／ｓ。发现薄膜的平均晶粒度及载流子迁移率与衬底温度和材料有关。用该薄膜在未抛光重掺杂磷的硅衬底上制备１ｃｍ２的ｐ＋ｎ结样品电池，无减反射涂层，其转换效率为４．５４％（ＡＭ１．５，１００ｍＷ／ｃｍ２，２５℃）。Polycrystalline silicon(poly Si)films(10—20μm)were grown by a rapid thermal chemical vapor deposition technique from SiH 2Cl 2 with a growth rate up to 10nm/s at the substrate temperature(Ts)of 1030℃.The average grain size and carrier mobility of the films were found to be dependent on T s and the substrate materials.By using this kind of films,solar cells have been prepared on heavily phosphorus doped silicon substrate unpolished with an energy conversion efficiency of 4.54% (AM1.5,100mW/cm 2,25℃).

关 键 词：多晶硅薄膜 太阳电池 RTCVD 薄膜太阳电池 

分 类 号：TM914.42[电气工程—电力电子与电力传动]