多注双间隙耦合腔电子电导计算与模拟  

Calculation and Simulation of the Electronic Conductance in Double Gap Coupling MBK Cavity

作　　者：全亚民[1,2] 丁耀根[1] 王树忠[1] 高冬平[1,2] 

机构地区：[1]中国科学院电子学研究所中国科学院高功率微波源与技术重点实验室,北京100190 [2]中国科学院研究生院,北京100039

出　　处：《电子与信息学报》2009年第5期1214-1217,共4页Journal of Electronics & Information Technology

基　　金：国家自然科学基金(60701011)资助课题

摘　　要：该文基于空间电荷波理论模型,推导出多注双间隙耦合腔电子电导的单模理论和多模理论计算公式。比较结果显示对于双间隙耦合腔,单模理论计算结果足够准确。由粒子模拟结果与计算结果的一致证明了计算结果的正确性。最后使用粒子模拟研究了电压调制系数和聚焦磁场对电子电导的影响。结果显示当电压调制系数小于0.1并且聚焦磁场大于1.5倍布里渊磁场时,小信号理论计算的电子电导是准确的。Based on the single-mode and multi-mode space charge wave theory, the analytical expressions for the electronic conductance in a double gap coupling MBK cavity are derived. The analytical theories show that the single-mode theory is sufficiently accurate for common coupling double gap cavity. In addition, the results of analytical theory are shown to agree well with particle-in-cell simulations. Moreover the effects of the modulation coefficient and axial magnetic field on the electronic conductance are researched by PIC simulation. The results show that the electronic conductance calculated by small signal theory is accurate when the modulation coefficient is less than 0.1 and the magnetic field exceeds 1.5 times of the Brillouin field.

关 键 词：多注速调管 双间隙耦合腔 电子电导 

分 类 号：TN122[电子电信—物理电子学]