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作 者:左寒松[1] 杨永顺[1,2] 郭俊卿[1,2] 刘祎冉[1]
机构地区:[1]河南科技大学材料科学与工程学院,河南洛阳471003 [2]河南省有色金属材料科学与加工技术重点实验室,河南洛阳471003
出 处:《材料科学与工程学报》2009年第3期418-420,459,共4页Journal of Materials Science and Engineering
摘 要:采用传统固相烧结工艺制备BaBi4Ti4O15(BBT)陶瓷,研究了氧化铋过量与铌掺杂量对试样晶相、微观组织结构以及压电介电性能的影响。结果表明:各试样都形成了与BBT相同的单一相结构,说明适量氧化铋过量和B位Nb5+掺杂并未改变BBT陶瓷的晶体结构;随着Nb5+掺杂量的增加,晶粒尺寸持续降低,但是超过Nb5+的固溶限度后,细化效果不再明显增加;压电常数和相对介电常数随掺杂量增加先增后减,其峰值也出现在Nb5+的固溶限度处。介质损耗始终呈现增长趋势,但增长幅度不大。由此可见Nb5+固溶限度点是性能转变的关键点。BaBi4Ti4O15 (short for BBT) ceramics were prepared by solid-state reaction technology. The effects of different excess Bi and Nb^5+ doping on the ceramics were investigated respectively, mainly including its phase compositions, microstructures, piezoelectric constant d33, relative dielectric constant εr and dielectric loss tanδ. The results show that the single phase was formed in all the specimens as in BBT, because the crystal structure of the ceramics wasn't changed by the right amount of excess Bi and Nb^5+ doping. With the increase of the amount of Nb^5+ , the grains continued shrinking, but the effect didn't continue any longer when the amount exceeded the solid solubility limit of Nb^5+. Both d33 and εr increased firstly and decreased then, and the peak values were got at the point of the solubility limit of Nb^5+ . Tanδ increased continuously in a very minor scale. So the solid solubility limit of Nb^5+ is the key point.
关 键 词:BaBi4Ti4O15 铋过量 Nb^5+掺杂 固溶限度 压电介电性能
分 类 号:TM282[一般工业技术—材料科学与工程]
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