采用半导体量子阱薄膜实现Nd:YAG激光器被动锁模  

Passive Mode-Locking in Nd: YAG Laser Using Semiconductor Quantum-Well Films

作　　者：王加贤[1] 王国立[1] 苏培林[1] 郭亨群[1] 

机构地区：[1]华侨大学信息科学与工程学院,福建泉州362021

出　　处：《光学学报》2009年第6期1591-1595,共5页Acta Optica Sinica

基　　金：国家自然科学基金重点项目(60838003);国家自然科学基金(60678053);国家973计划(2007CB613401)资助课题

摘　　要：采用金属有机化学气相淀积(MOCVD)法在InP衬底上低温生长6个周期的InGaAsP多量子薄膜,薄膜对1.06μm激光的小信号透过率为23%。该薄膜兼作Nd:YAG激光器的可饱和吸收体及耦合输出镜,实现1.064μm激光的被动锁模运转,获得平均脉宽23 ps,能量15 mJ的单脉冲序列。采用射频磁控溅射法在石英衬底上制备4个周期的Si/SiNx多量子阱薄膜,样品在氮气环境下以1000℃退火30 min后,插入Nd:YAG激光器腔内,实现1.064μm激光的被动锁模,获得脉宽30 ps的脉冲序列。多量子阱半导体薄膜作为可饱和吸收体实现激光器的被动锁模具有成本低、设计和制作简单、运转稳定和使用方便的优点。A 6-period InGaAsP quantum-wells film has been grown on InP substrate at a low temperature by metal organic chemical vapor deposition （MOCVD）. The small signal transmission of the sample at 1. 064 μm is 23%. By using it as a saturable absorber and an output coupler concurrently, passive mode-locking operation in a Nd： YAG laser at 1. 064 μm can be realized, and a single pulse train with average pulse duration of 23 ps and energy of 15 mJ was obtained. A Si/SiNx film wich consisted of 4-period quantum-wells structure has been prepared on quartz substrates by RF magnetron reaction sputtering technique and annealed at 1000 ℃ for 30 min in N2 environment. Inserting the sample into the Nd：YAG laser resonator, passive mode-locking operation at 1. 064 μm and a single pulse train with 30 ps average pulse duration can be obtained. Passive mode-locking of using semiconductor multiple quantum-wells film as saturable absorber has advantages of low cost, design and manufacture simplicity, stability and convenience.

关 键 词：激光技术 InGaAsP多量子阱 Si/SiNx多量子阱 被动锁模 ND:YAG激光器 

分 类 号：TN248.1[电子电信—物理电子学]