电化学阳极氧化条件对阵列多孔硅的影响  

Influence of electrochemical anodization conditions on arrayed porous silicon

作　　者：张光辉[1] 孔令峰[1] 潘倩[1] 黎学明[1] 

机构地区：[1]重庆大学化学化工学院,重庆400030

出　　处：《功能材料》2009年第6期966-969,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10476035)

摘　　要：采用电化学阳极氧化法,将预光刻图案的p型硅片制备成阵列多孔硅。讨论电化学阳极氧化条件对阵列多孔硅形貌的影响。结果表明:随着HF浓度、电流密度、阳极氧化时间的增大,阵列多孔硅的孔深逐渐加大;当HF∶C2H5OH∶H2O(体积比)为1∶1∶1～1∶2∶5,电流密度为1.56mA/cm2,阳极氧化时间为3h时,制备出的阵列多孔硅具有比较规整的阵列孔,并且孔深能够达到50μm;表面活性剂对阵列孔的形成有很大影响,加入表面活性剂后形成的孔才具有一定的规整性以及深宽比。By the method of electrochemical anodization, arrayed porous silicon is prepared using p-Sl water covered by anti-corrosion layers and initiation array pits. The effects of electrochemical anodization conditions on arrayed porous silicon are discussed. It is shown that： With increasing of HF concentration, current density and anodization time, the depth of arrayed porous silicon will increase gradually; When the arrayed porous silicon with regular arrayed pores and 50μm pore depth is obtained at the condition of HF ：C2H5OH： H2O as 1 ： 1 ： 1-1 ： 2 ： 5, current density as 1.56mA/cm^2 , anodization time as 3h; the influence of surfactant on arrayed pores is important, only adding surfactant, the arrayed porous silicon with high regulation and high ratio of depth/ width can be obtaind.

关 键 词：阵列多孔硅 电化学 阳极氧化 表面活性剂 

分 类 号：O433.4[机械工程—光学工程]