纳米Al_2O_3掺杂对厚膜应变电阻性能的影响  

Effect of Nanoalumina Modifier on Properties of Thick Film Strain Resistor

作　　者：马以 武宋箭 常慧敏[1] 王英先 

机构地区：[1]中国科学院合肥智能机械研究所

出　　处：《功能材料》1998年第4期386-389,共4页Journal of Functional Materials

摘　　要：采用粒子尺寸为８ｎｍ的纳米Ａｌ２Ｏ３作为掺杂改性剂，通过选择合适粒径和配比的导电相、玻璃相及烧结工艺，得到了一种ＧＦ为１３、电阻温度系数小、稳定性良好的钌基厚膜应变电阻，并从厚膜电阻导电机理和纳米材料特性出发，讨论了纳米氧化铝掺杂对厚膜应变电阻应变系数、温度系数、稳定性的影响及其机理。A new method to increase of the gauge factor(GF) Rubased thick film resistor (TFR) was introduced. Nanoalumina sized 8nm,was added as modifier to not only increase GF notably, but also gain high properties TFR. The TFR conductive mechanism and the characteristic of nanomaterials were analysed in this paper. The influences of nanoAl2O3 modifier on TCR, GF, good stability and strain mechanism of thick film strain resistor were discussed.

关 键 词：纳米氧化铝 厚膜应变电阻 传感器 应变 掺杂 

分 类 号：TP212.04[自动化与计算机技术—检测技术与自动化装置]