金属纳米晶的制备及其在MOS电容结构中的存储特性  

Fabrication and charging characteristics of metal nanocrystals in MOS capacitor structure

作　　者：倪鹤南[1,2] 吴良才[3] 宋志棠[3] 惠春[2] 

机构地区：[1]上海交通大学微纳科学技术研究院,上海200050 [2]上海交通大学生命科学技术学院,上海200030 [3]中国科学院上海微系统与信息技术研究所纳米技术实验室,上海200030

出　　处：《功能材料与器件学报》2009年第3期249-253,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(60776058);国家重点基础研究发展计划(2007CB935400;2006CB302700);上海市纳米技术专项(0752nm027)

摘　　要：优化了金属纳米晶的制备工艺参数,得到了分布均匀,形状为球形,平均尺寸8nm,密度2.5×1011/cm2的Ag纳米晶。在此基础上,制备了包含Ag纳米晶的MOS电容结构。利用高频电容-电压(C-V)和电导-电压(G-V)测试研究了其电学性能,证明该MOS电容结构的存储效应主要源于金属纳米晶的限制态。电容-时间(C-t)测试曲线呈指数衰减趋势,保留时间290s,具有较好的保留性能。The optimized process parameters for the formation of metal nanocrystals are investigated. Ag nanocrystals with the mean size of 8nm and density of 5 × 10^11/cm^2 are obtained. Also, the disperse and the shape of the nanocrystals are uniform and spherical. MOS capacitor structure with Ag nanocrystals embedded in gate oxide is fabricated. The electrical characteristics is investigated through high -frequency capacitance versus voltage （ C - V） and conductance versus voltage （ G - V） measurements, which is shown that the memory effect mainly originates from the confined states of metal nanocrystals. Normalized capacitance versus time （C -t） curve follows to an exponential decaying law. It is observed that the retention time is 290s, which suggests Ag nanocrystals can provide enhanced retention performance.

关 键 词：非挥发性存储器 纳米晶 金属纳米晶 

分 类 号：TP343[自动化与计算机技术—计算机系统结构]