定向SnO_2纳米管的阵列制备及其场发射性能  

Synthesis and Field-Emission Properties of Aligned SnO_2 Nanotubes Arrays

作　　者：秦臻[1] 李子炯[2,3] 王海燕[2] 

机构地区：[1]华北水利水电学院数学与信息科学学院,郑州450007 [2]郑州轻工业学院技术物理系,郑州450007 [3]上海交通大学微纳科学研究院,上海200240

出　　处：《微纳电子技术》2009年第6期346-349,357,共5页Micronanoelectronic Technology

摘　　要：SnO2纳米材料由于其优异的性能和在纳米电子器件以及气敏传感器等方面的潜在应用受到了广泛关注,快速大量制备SnO2纳米管(线)是其规模化应用的前提。利用自制的高频感应设备在Si基底上快速生长出定向的SnO2纳米管阵列,由SEM和TEM分析可知,SnO2纳米管直径达到50～100nm。场发射结果表面制备的SnO2纳米管阵列具有较低的开启电压,即当产生的电流密度为10μA/cm2时所对应的电场只有1.64V/μm,这一数值低于碳纳米管和其他一维氧化物纳米材料的开启电场,同时所制备的产物具有良好的场发射稳定性,良好的场发射性能说明SnO2纳米管在场发射平板显示及真空电子器件方面具有较好的应用潜力。One-dimensional semiconductor nanowires and nanotubes such as SnO2 nanostructure have attracted increasing interest and are expected to lead to novel device applications due to intriguing and unique properties. Aligned tin dioxide （SnO2） nanotubes were synthesized by the high-frequency inductive heating. Nanotubes with high-yield were grown on silicon substrates in less than 5 min, using SnO2 and graphite as the source powder. The nanotubes were showed the diameters were from 50 nm to 100 nm with the scanning electron microscopy and transmission electron microscopy. The turn-on field to produce a current density of 10μA/cm^2 was found to be 1.64 V/μm. The samples show good field emission properties with a fairly stable emission current. This type of SnO2 nanotubes can be applied as field emitters in displays as well as vacuum electric devices.

关 键 词：二氧化锡 纳米管 阵列 高频感应 场发射 开启电场 

分 类 号：TB383[一般工业技术—材料科学与工程] TN304.21[电子电信—物理电子学]