一维势阱并伴有自旋轨道耦合的输运  

Spin Transport Property Through Semiconductor Quantum Well

作　　者：李国锋[1] 

机构地区：[1]安徽大学物理学院,合肥230031

出　　处：《赣南师范学院学报》2009年第3期52-54,共3页Journal of Gannan Teachers' College(Social Science(2))

摘　　要：研究一束自旋极化电子在准一维系统中的输运,输运电子经过一个势阱和SOI共同作用的散射区.研究发现经过散射后电子自旋翻转的概率与费米能EF、势阱的深度V0、自旋轨道耦合的强度λR以及各通道的能级Ej,并且翻转概率具有周期振荡特性,即随散射区的长度呈周期性变化.The transport of polarized electron in a quasi-one dimension system is investigated. The electron transport through a quantum well and the combined effect of SOI scattering zone. We find that roang physics factor such as femi energy EF , the deepth of quantum well Vo and the channel Ej can influence the spin-flip probability, and spin-flip probability have a cycle oscillation behavior with the length of the scattering area.

关 键 词：量子势阱 SOI耦合(Rashba) 自旋翻转 平面波近似 

分 类 号：O413[理学—理论物理]