Si_3N_4陶瓷轴承内圈NCD膜制备中的热流耦合分析  

Heat-flux Coupling Simulation during the Process of Growing NCD Film on Si_3N_4 Bearing Inner Ring

作　　者：杨春[1] 卢文壮[1] 左敦稳[1] 徐锋[1] 任卫涛[1] 

机构地区：[1]南京航空航天大学江苏省精密与微细制造技术重点实验室,南京210016

出　　处：《人工晶体学报》2009年第3期642-647,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助项目(No.50605032);江苏省自然科学基金资助项目(No.BK2006189No.BK2007193)

摘　　要：本文设计了一套用于HFCVD系统中轴承内圈NCD涂层制备的电极装置,同时在热交换过程的分析基础上对该系统进行了热流耦合分析。对进气参数进行优化后,衬底温度场及气体流场分布均匀。在数值分析的基础上,在氮化硅陶瓷内圈上成功制备了NCD膜。In this paper, a kind of new electrode for depositing NCD film on bearing inner ring was designed. Based on the analysis of heat exchange process, two dimensional heat-flux coupling finite element model was built up. After the gas inlets were optimized, simulation results showed that the substrate temperature field and gas velocity field were uniform. Based on the numerical analysis, NCD coating on Si3N4 bearing inner ring was successfully obtained.

关 键 词：NCD 陶瓷轴承 涂层 热流耦合分析 有限元 

分 类 号：O484[理学—固体物理]