不同X射线管电压下CsI和CsI(Tl)晶体的X射线辐照致发光  

Radioluminescence of Crystalline CsI and CsI(Tl) with Various X-ray Tube Voltages

作　　者：吴正龙[1] 杨百瑞[2] 

机构地区：[1]北京师范大学分析测试中心,北京100875 [2]北京师范大学物理系,北京100875

出　　处：《人工晶体学报》2009年第3期666-671,共6页Journal of Synthetic Crystals

摘　　要：在室温（290 K）和低温（25 K）下,测量了从11-40 kV的一系列管电压下X射线激发纯CsI和CsI（Tl）晶体的辐照致发光（RL）谱。结果表明：在固定温度下,管电压变化后,305 nm和340 nm的本征发光带和580 nm的非本征发光带的形状结构均不发生变化,只是其强度发生变化。对所测得的各发光带强度随管电压的变化关系用抛物线模型进行了拟合分析,得到了较好的结果。同时还发现纯CsI和CsI（Tl）晶体中所有本征RL发光带强度与X射线强度基本上成正比关系,而当管电压增加时,CsI（Tl）晶体中非本征发光带强度的增加速度慢于本征发光带。分析认为,290 K时这可能与样品中另一个位于400 nm左右的发光带有关;而在25 K时则可能和H心与VK心的竞争有关。A series of radioluminescence （RL） spectra of the undoped CsI and CsI （T1） crystals have been detected at 290 K and 25 K with X-ray tube voltages varies from 11 kV to 40 kV. The result show that 305 nm and 340 nm intrinsic bands and the 580 nm thallium related emission band were observed. It has been found that when temperature remains constant, only the intensity, but not the wavelength, or the band shape changed with the change of tube voltage. With a parabolic model, good fitting has been obtained for the data of RL intensity vs. tube voltage in each emission band. It has also been found that the intensity of the intrinsic emissions is essentially proportional to the X-ray intensity. And the extrinsic RL signals increased slower than the intrinsic ones with the increase of tube voltage. It was suggested to be associated with another RL band at about 400 nm at 290 K and with the competition between H and VK centers at 25 K.

关 键 词：辐照致发光 CSI CsI(Tl) 曲线拟合 

分 类 号：O734.3[理学—晶体学]