磁场非平衡度对Cr镀层晶体生长过程的影响  

Influence of Unbalanced Coefficient of Magnetic Field on the Crystal Growth of Cr Film

作　　者：文晓斌[1] 李显[1] 梁戈[1] 蒋百灵[1] 

机构地区：[1]西安理工大学材料科学与工程学院,西安710048

出　　处：《人工晶体学报》2009年第3期693-699,共7页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863)(No.2005AA33H010)

摘　　要：采用扫描电子显微镜、表面粗糙度测试仪及X射线衍射仪分析了直流、单靶磁控溅射条件下磁控管非平衡度对Cr镀层生长过程的影响。结果表明:磁控管非平衡度的改变显著影响着整个沉积过程中镀层的表面形貌、表面粗糙度以及镀层晶体结构。镀层沉积各时间段内均由不同的影响因素主导其生长过程,斜向沉积和自遮蔽效应是柱状晶斜向生长的主要原因。同一沉积时间下,镀层粗糙度随磁控管非衡度的增大而增大。随着沉积速率的增大,镀层晶体经历了由随机生长向择优生长的转变过程且镀层晶体发生了由密排面Cr(110)向次密排面Cr(200)择优生长的转变。The SEM, surface roughness tester and XRD was used respectively to analyze the influence of unbalanced coefficient of magnetron on the growth of Cr film under the magnetron sputtering environment with direct current and single magnetron pattern. The results show that the surface morphology, surface roughness and crystal structure were significantly affected by the changes of unbalanced coefficient of magnetron. During different deposition periods, the growth of Cr film was dominated by different factors. The appearence of slant columnar crystal pattern of the film under different unbalanced coefficient was due to the oblique deposition and self-capture effecet. The surface roughness was increased as the unbalanced coefficient increasing under a same deposition time. With the increasing of deposition rate, the growth of Cr film underwent a transition from random growth to preferential orientation growth and the crystal＇s preferantial orientation has changed from the close-packed plane Cr（110） to its secondary close- packed plane Cr（200）.

关 键 词：磁控管非平衡度 表面形貌 粗糙度 晶体结构 

分 类 号：TG144[一般工业技术—材料科学与工程] TB43[金属学及工艺—金属材料]