砷、锑和铋对铜电沉积及阳极氧化机理的影响  

Influence of As, Sb and Bi on electrodepositing and anode oxidation mechanism of copper

作　　者：肖发新[1,2] 郑雅杰[1] 简洪生[1] 龚竹青[1] 许卫[1] 

机构地区：[1]中南大学冶金科学与工程学院,湖南长沙410083 [2]河南科技大学材料科学与工程学院,河南洛阳471003

出　　处：《中南大学学报（自然科学版）》2009年第3期575-580,共6页Journal of Central South University:Science and Technology

基　　金：广东省创新基金资助项目(200501045)

摘　　要：采用循环伏安及交流阻抗研究As(Ⅲ,Ⅴ),Sb(Ⅲ,Ⅴ)和Bi(Ⅲ)对铜电沉积及阳极氧化机理的影响。研究结果表明:电解底液循环伏安分别在0.06V和-0.25V出现还原峰a和b,在0.10V和0.23V出现氧化峰b′和a′。As(Ⅲ)加速铜的电沉积,As(Ⅴ),Sb(Ⅲ,Ⅴ)和Bi(Ⅲ)均改变铜的沉积机理,使两步反应变成一步反应,其中,加入Sb(Ⅲ,Ⅴ)和Bi(Ⅲ)的电解液在?0.13V附近出现杂质Sb和Bi的还原峰;这些杂质均抑制铜的氧化反应,改变阳极氧化机理,使两步氧化变为一步氧化反应;将As(Ⅲ,Ⅴ),Sb(Ⅲ,Ⅴ)和Bi(Ⅲ)单独加入电解液中,电极过程均产生电活性物质吸附,均使电极过程阻抗减小。The influences of As（Ⅲ, V）, Sb（Ⅲ, V）, Bi（Ⅲ） on the electrodepositing and anode oxidation mechanism of copper were studied using cyclic voltammetric and AC impedance techniques. The results show that the reduction peaks of a and b occur at the cathodic potential of 0.06 V（a） and -0.25 V（b） in the reduction process of base electrolyte, and the corresponding oxidation peaks occur at the anodic potential of 0.23 V（a＇） and 0.10 V（b＇）, respectively. The As（Ⅲ） ion promotes the electrodepositing of copper. The electrodepositing process of copper is changed to single-step reaction after As（V）, Sb（Ⅲ, V ） and Bi（Ⅲ） are added. The reduction peak of impurity occurs at -0.13 V approximately after Sb（Ⅲ, V） and Bi（Ⅲ） are added. After these impurities are added, the anode oxidation reaction of copper is restrained and the oxidation process is changed to singe-step reaction. The electroactive species are adsorbed to electrode surface during the electrodepositing process after theses impurities are added, which decreases the impedance of electrodepositing process.

关 键 词：砷 锑 铋 铜电沉积 阳极氧化 

分 类 号：TF804.8[冶金工程—有色金属冶金] TF811