多晶硅锭定向凝固过程的数值模拟  

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

作　　者：陈国红[1] 王滋渊[1] 肖益波[1] 瞿海斌[1] 

机构地区：[1]中国电子科技集团公司第四十八研究所,湖南长沙410111

出　　处：《电子工业专用设备》2009年第6期40-43,46,共5页Equipment for Electronic Products Manufacturing

摘　　要：研究了多晶硅锭定向凝固过程中晶体和熔体中的温度分布、固液界面的温度场,并对定向凝固过程进行了数值模拟,对热场对多晶硅晶体生长的影响进行了系统的理论分析和试验验证。In this paper, the temperature distribution of the crystal and.melt for the polycrystalline silicon ingot directional solidification process was discussed. And the temperature field of the solid-liquid interface was studied. The directional solidification process was visualized by the numerical simulation. A systematic theoretical analysis and experimental validation was provided for the effect about thermal field to polycrystalline silicon crystal growth.

关 键 词：多晶硅锭 定向凝固过程 热场 数值模拟 

分 类 号：TN305[电子电信—物理电子学]