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出 处:《Chinese Science Bulletin》2009年第13期2221-2224,共4页
基 金:Supported by the National Natural Science Foundation of China(Grant Nos.60377023,60672017);New Century Excellent Talents in University(NCET),Shanghai Optical Science and Technology Project(Grant No.05DZ22009);Shanghai Pujiang Program
摘 要:We demonstrate both theoretically and numerically that slow light can enhance the parametric process of silicon in photonic crystal line-defect waveguides.Specifically,to get the desired gain,the pump power for a given gain medium length or the gain medium length for given pump power can be reduced by(c/vgn)2 when slow light waveguides are used,where n is the material index of conventional waveguide,vg is the group velocity of the slow light waveguide and c is the light velocity in vacuum.We demonstrate both theoretically and numerically that slow light can enhance the parametric process of silicon in photonic crystal line-defect waveguides. Specifically, to get the desired gain, the pump power for a given gain medium length or the gain medium length for given pump power can be reduced by (c/vgn)^2 when slow light waveguides are used, where n is the material index of conventional waveguide, vg is the group velocity of the slow light waveguide and c is the light velocity in vacuum.
关 键 词:光子晶体波导 参量放大 泵浦功率 增益介质 材料指数 线缺陷 群速度 长度
分 类 号:TN252[电子电信—物理电子学] O431[机械工程—光学工程]
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