两种新型大功率LED封装电极层的比较  

Comparison between Two Electrodes for High-Power LED Packaging

作　　者：王耀明[1] 王德苗[1] 苏达[1] 

机构地区：[1]浙江大学信息科学与工程学院,浙江杭州310027

出　　处：《江南大学学报（自然科学版）》2009年第3期300-304,共5页Joural of Jiangnan University (Natural Science Edition)　

摘　　要：为了提高半导体发光二极管封装的可靠性与焊接性能,避开传统的电极层陶瓷/金属的机械性能匹配问题,设计了两种电极层的结构:一种是多层膜系结构,另一种是氧化铟锡(ITO)薄膜。研究发现:多层膜系结构的电阻率为3×10-6Ω.cm,平均抗拉强度为4.22 MPa,膜层表面缺陷较少,致密性好,焊接性能好;ITO薄膜在紫外辐照条件下制备样品的电阻率、表面形貌和生长取向明显优于未经紫外辐照的样品,在线紫外辐照下最低方阻为5Ω,电阻率为2.5×10-4Ω.cm,平均抗拉强度为5.3 MPa,表面缺陷少,致密度好,趋于[222]晶面的择优取向。多层膜系结构的电阻率明显优于ITO薄膜,但平均抗拉强度不如ITO薄膜。In order to improve LED （light-emitting diode） package reliability and welding performance and avoiding the properties mis-matching problem, we produced multi-layer Cr/Ni-Cu/Ag and ITO thin-film as insulator layer. The results show that the multi-layer of which the resistivity achieved 3 × 10^-6·Ωcm, average bonding force up to 4.22 MPa with little surface defaults, good density and fine welding probability, could meet the acquirement of the electrode layer. And the resistivity, the surface topography and the growth orientation of ITO thin-film produced with UV radiation are much better than samples produced without UV radiation. The sample was produced by UV radiation with the smallest square resistance being 5Ω, the resistivity being 2.5 × 10^-4·Ω cm, average bonding force being up to 5.3 MPa. ＇The little surface defaults and good density and good welding probability could meet the acquirement of the electrode layer.

关 键 词：大功率LED 多层膜系结构 氧化铟锡薄膜 

分 类 号：TN312[电子电信—物理电子学]