施主掺杂BT-BNT陶瓷的制备及其PTC性能研究  

FABRICATION AND PTC PROPERTIES OF DONOR DOPED BT-BNT CERAMICS

作　　者：晏秋实[1,2] 黄焱球[1,2] 王洪亮[1,2] 刘甜甜[1,2] 张蓓[1,2] 

机构地区：[1]教育部纳米矿物材料及应用工程研究中心,武汉430074 [2]中国地质大学材料科学与化学工程学院,武汉430074

出　　处：《中国陶瓷》2009年第7期39-42,共4页China Ceramics

摘　　要：采用溶胶凝胶法及固相法制备了A位和B位施主掺杂的(1-x)Bi0.5Na0.5TiO3-xBaTiO3(BT-BNT)陶瓷,对其介电和阻温特征进行了研究。结果表明,当BNT含量由5mol%增至40mol%时,陶瓷的居里温度由144℃逐渐增高至185℃。A位施主掺杂陶瓷表现出V型PTC特性。B位施主掺杂样品具有典型的PTC特性。当BNT加入量为5mol%、Nb2O5的掺入量为0.15mol%时,陶瓷的升阻比达到316。The A-site and B-site doped （1-x）Bi0.5Na0.5TiO3-xBaTiO3 （BT-BNT） ceramics were prepared by a sol-gel method and a solid state reaction method, respectively. And the properties of the ceramics were studied. The Curie temperature, Tc, shifted from 144℃ and 185℃ when the content of BNT increased from 5mol% to 40mol%. V-shape PTC characteristics were observed in the samples doped with Y2O3, while the typical PTC characteristics could be obtained for the samples doped with Nb2O5. The Rmax/Rmin ratio of the ceramic with 5mol% BNT and 0.15mol% Nb2O5 was 316.

关 键 词：BT-BNT陶瓷 PTC性能 高居里温度 施主掺杂 

分 类 号：TN304.82[电子电信—物理电子学]