ECLD激光器三种模型的双稳特性比较  

Study on the Bistable Characteristics of Three ECLD Models

作　　者：李海琴[1] 黄立平[1] 

机构地区：[1]青海民族大学电子工程与信息科学系,西宁810007

出　　处：《半导体技术》2009年第7期661-664,700,共5页Semiconductor Technology

摘　　要：为了研究频率偏离增益峰值时光栅外腔半导体激光器的双稳特性,对比了以前研究双稳态的原简化模型和近期建立的H参量简化模型、H参量模型所得的双稳环环宽及其存在的条件;采用数值计算和模拟的方法,讨论了三种模型在不同剩余反射率下的双稳环环宽与频率的关系,将H参量简化模型、H参量模型在相同模式中环宽随剩余反射率的变化曲线进行了比较。结果表明,三种模型在增益峰值处的双稳特性相同,第一种模型只能反映增益峰值处的双稳特性,后两种模型能够展示调谐范围内的双稳特性,但在增益峰值两侧新的两种模型的双稳特性有很大的差异,所以在研究ECLD的双稳特性时考虑双稳环随H参量的变化而倾斜十分必要。To study the bistable characteristics of ECLD when frequency deviating from gain peak, the width and necessary condition of hysteresis loop derived respectively from prior simplified model and the recently established H parameter simplified model and H parameter model were contrasted. The relations of loop width and frequency under different residual reflectivity in three models were studied by numerical calculation and imitation, and the loop width curves changed with the residual reflectivity in H parameter simplified model and H parameter model were contrasted. The results show that in three models, the bistable characteristics at gain peak are identical; the only bistable characteristic at gain peak is shown in the first model; however, the bistable characteristics in the turning range is shown in the second and third models, and the bistable characteristics in two sides of turning rang are very different in the later two models. Therefore, it is necessary to consider the condition of hysteresis loop changed with H parameter when study the bistable characteristics of ECLD.

关 键 词：激光技术 H参量模型 H参量简化模型 归一化环宽 剩余反射率 

分 类 号：TN248[电子电信—物理电子学]