提高PZT阴极电子发射性能的实验研究  

Experimental Study on PZT Cathodes for Improving the Properties of Electron Emission

作　　者：蔡雪梅[1] 周应华[2] 

机构地区：[1]重庆邮电大学光电学院,重庆400065 [2]重庆邮电大学计算机学院,重庆400065

出　　处：《半导体技术》2009年第7期672-675,共4页Semiconductor Technology

摘　　要：实验研究了提高PZT(锆钛酸铅)阴极电子发射性能。在电子发射快极化反转机理的基础上,分析了电流发射密度随激励场强增大的原因。通过电极绝缘保护层改散了阴极的表面击穿特性,通过等静压工艺改善了阴极的体击穿特性和通过Mn2+的添加提高材料本生的耐电压强度,从而提高了施加在阴极上的激励场强值。实验数据显示等静压工艺、高的激励场强、绝缘保护层、Mn2+的添加等均有利于阴极的电流发射,发射电流密度提高到123A/cm2。The effects of the experimental conditions on the results of electron emission, such as the dopants, the value of exited voltage, the isostatic pressure, the cathode insulation layer on the electrode, were researched to improve the electron emission properties of PZT （lead zirconate titanate ） cathodes. The relationship of the excited voltage and emitted current densities were analyzed with electron emission theory, it concluded that the maximum emitted current densities were due to the breakdown threshold of cathodes. The insulation layer was coated on the electrode to improve the surface breakdown threshold and the cathodes were pressed by isostatic pressure to improve the bulk breakdown threshold. Bulk breakdown threshold can also be increased by the dopant Mn^2＋ , thus higher current densities is up to 123 A/cm^2.

关 键 词：PZT阴极 发射电流密度 等静压工艺 绝缘保护膜 击穿阈值 

分 类 号：O462[理学—电子物理学]