几种Si、Ge纳米线导热系数的原子模拟  

Atomic Simulations on Thermal Conductivity of Several Si,Ge Nanowires

作　　者：沈海军[1] 田少岗[1] 

机构地区：[1]南京航空航天大学航空宇航学院,江苏南京210016

出　　处：《纳米科技》2009年第3期3-5,共3页

摘　　要：采用非平衡分子动力学方法模拟了Si纳米线、Ge纳米线、核-壳结构的Si/Ge纳米线及超晶格结构的Si/Ge纳米线的导热系数,给出了纳米线的温度与导热系数关系曲线,对比了几种纳米线导热特性的差异,研究结果表明,随着温度的升高,各纳米线的导热系数降低;相同温度下,纳米线导热系数的大小顺序为：核-壳结构的Si/Ge纳米线、超晶格结构的Si/Ge纳米线、Si纳米线、Ge纳米线。Thermal conductivities of Si, Ge, Si/Ge core-shell and Si/Ge super-lattice nanowires at different temperature were simulated by the non-equilibrium molecular dynamics method, the relationship ＇of temperature and thermal conductivity of nanowires was drawn and their thermal properties were compared. It is shown that the thermal conductivities of the nanowires decrease with the increasing temperature, and at same temperature the conductivities of nanowires have the order of Si/Ge core-shell nanowire.Si/Ge super-lattice nanowire.Si nanowire.Ge nanowire.

关 键 词：非平衡分子动力学 纳米线 导热系数 

分 类 号：TB383[一般工业技术—材料科学与工程]