半导体桥上尖角、圆孔对其电爆性能的影响(英文)  

Effect of V-type Angle and Hole of Semiconductor Bridge on Electro-explosive Performance

作　　者：周彬[1] 毛国强[1] 秦志春[1] 祝逢春[2] 徐振相[1] 陈飞[1] 张文超[1] 

机构地区：[1]南京理工大学化工学院,江苏南京210094 [2]中国人民解放军95856部队,江苏南京210028

出　　处：《含能材料》2009年第3期349-352,共4页Chinese Journal of Energetic Materials

摘　　要：设计了14种带有尖角和圆孔的半导体桥,研究了在电容放电发火条件下尖角、圆孔对其发火时间、发火所消耗的能量等性能参数的影响规律,并从半导体桥的作用机理方面对实验结果进行了分析。结果表明,SCB上V型尖角使得SCB发火时间和发火所消耗的能量明显降低,而圆孔对SCB发火性能影响不明显。Fourteen kinds of SCBs with V-type angle and hole were designed, and the electro-explosive performances including the function time, energy required were investigated with firing by capacitor discharge circuit. The plasma firing mechanism of SCB was analyzed. Results indicate that the function time and the energy required decrease signifieantly for SCB firing with the V-type angle on the SCB decreasing, while the holes have a little effect on the explosive performance of SCB.

关 键 词：应用化学 火工品 半导体桥 发火时间 发火消耗能量 

分 类 号：TN303[电子电信—物理电子学]