垂直于膜面磁化的巨磁电阻传感器的微磁模拟  

Micromagnetic Model for Large Field Sensors with Perpendicular Magnetizations

作　　者：金伟[1] 

机构地区：[1]安徽师范大学物理与电子信息学院,安徽芜湖241000

出　　处：《安徽师范大学学报（自然科学版）》2009年第3期230-233,238,共5页Journal of Anhui Normal University(Natural Science)

基　　金：安徽省自然科学基金(KJ2007B009);安徽师范大学青年基金(2007xqn66)

摘　　要：采用微磁模拟技术研究了一种高磁场传感器.该传感器的钉扎层采用垂直于膜面磁化的L10-FePt薄膜,感应层即自由层采用膜面内磁化的软磁NiFe薄膜.模拟计算表明,该传感器的磁场感应范围可提升到一个特斯拉,钉扎层的矫顽力和感应层的退磁场决定着该传感器的正负磁场感应窗是否对称.Micromagnetic simulations for a magnetoresistive sensor with sensing field up to Tesla is performed by using a perpendicular to film plane magnetized electrode [L10 - FePt] as hard layer and an in-plane magnetized electrode[NiFe] as sense layer. The simulations results indicate that the competition between the coercive field of the hard layer and the demagnetizing field of the sense layer dominates either a symmetric or an asymmetric field-sensing window.

关 键 词：微磁模拟 巨磁电阻 矫顽力 退磁场 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]