μcSi(n)/cSi(p)异质结太阳电池微晶硅背场的模拟与优化  

Back Surface Field of Μc-Si (n)/c-Si(p) Heterojunction Solar Cells by Simulation and Optimization

作　　者：李力猛[1] 周炳卿[1] 陈霞[1] 韩兵[1] 郝丽媛[1] 

机构地区：[1]内蒙古师范大学物理与电子信息学院,功能材料物理与化学重点实验室,呼和浩特010022

出　　处：《信息记录材料》2009年第3期18-21,共4页Information Recording Materials

基　　金：国家自然科学基金资助项目(50662003)

摘　　要：采用AFORSHET软件模拟了微晶硅背场对μcsi(n)/csi(p)异质结太阳电池性能的影响。结果显示:微晶硅背场的厚度对电池性能影响较小;而随着背场掺杂浓度的提高,短路电流和填充因子都逐渐提高,太阳电池效率随之增大;随着带隙的增大,短路电流和效率均是先增大,当带隙超过1.55ev时逐渐变小。当微晶硅背场的厚度为10nm,掺杂浓度为3×1018/cm3,带隙为1.55ev时,太阳电池的转化效率最高,达到21.8%。Back surface field （BSF） effect of μc-Si （n）/c-Si（p） heterojunction solar cell was simulated by AFORS-HET software. The results show that the thickness of the BSF has slight influence on the performance of the solar cell. The short circuit current and fill factor increase with the doped concentration. The short circuit current and translate efficiency increase with the band gap, but it also drops when the band gap reaches 1.55ev. The μc-Si（n）/c-Si（p） heterojunction solar cell has the highest translate efficiency of 21.8% with the thickness of the BSF of 10nm, band gap of 1.55ev , and the doped concentration of 3 ×10^18cm^-3.

关 键 词：AFORS—HET 异质结太阳电池 背场 

分 类 号：TK51[动力工程及工程热物理—热能工程]