激光与PIN光电探测器相互作用的响应度研究  

Research on responsibility of PIN detector interaction with laser

作　　者：徐立君[1] 张喜和[1] 吕彦飞[1] 蔡红星[1] 李昌立[1] 谭勇[1] 

机构地区：[1]长春理工大学理学院,吉林长春130022

出　　处：《激光与红外》2009年第7期717-720,共4页Laser & Infrared

基　　金：国防预研基金项目(No.A3620060122)资助

摘　　要：通过比较短路电流的方法,标定了探测器对He-Ne激光的响应度。用Nd∶YAG激光辐照PIN光电探测器,通过测量激光辐照后探测器对He-Ne激光的短路电流,获得了探测器响应度变化与辐照激光功率密度的关系。从实验数据可知,探测器被功率密度低于7.6×105W/cm2的Nd∶YAG激光辐照后,不会发生损伤,激光辐照后,探测器对He-Ne激光的响应度不发生改变;当Nd∶YAG激光的功率密度超过9.6×105W/cm2时,激光辐照后,探测器对He-Ne激光辐照的响应度开始下降,PN结遭到破坏是探测器响应度下降的根本原因,扫描电镜的结果与我们的分析相一致。Responsibility is an important factor reflecting the performance of photoelectric detector and an important basis judging whether the detector was laser-induced damaged. In this paper, compared with the short-circuit current of the standard detector,the responsibility of the detector used in the experiment was calibrated. After the PIN detector was irradiated by Nd：YAG laser, according to the change of short-circuit current,the relationship between the respon- sibility of detector and the power density of incident laser was obtained. The detector irradiated by laser is fit when the power density of Nd：YAG laser is lower than 7.6 ×10^5W/cm2, the responsibility of the detector was constant for He-Ne laser. When the power density of laser is more than 9.6×10^5W/cm2 , with increasing incident laser power density, the responsibility of the detector was reduced slowly. And the reason for the fall of responsibility was ana- lyzed. Our conclusion was confirmed by scanning electron microscope photographs （SEM）.

关 键 词：响应度 光电探测器 短路电流 激光辐照 

分 类 号：TN241[电子电信—物理电子学]