LiNbO_3基Sn-As_2S_8单偏振单模波导电光开关的设计  

Design of LiNbO_3-based Sn-As_2S_8 polarization-independence and single-mode waveguide electrical-optical switches

作　　者：陈直[1] 陈抱雪[1] 隋国荣[1] 李倩[2] 

机构地区：[1]上海理工大学光电信息与计算机工程学院,上海200093 [2]同济大学电子与信息工程学院,上海201804

出　　处：《光学仪器》2009年第3期66-69,共4页Optical Instruments

基　　金：国家自然科学基金资助项目(F050203)

摘　　要：掺锡非晶态硫化砷(Sn-As_2S_8)半导体具有独到的光阻断效应,与电光效应晶体结合有望构成新的功能器件。为此提出了一种以铌酸锂(LiNbO_3)为基板、以Sn-As_2S_8半导体为导波的马赫一曾德干涉型电光开关的方案。阐述了器件设计的理论和方法,设计了LiNbO_3基Sn-As_2S_8单偏振单模波导,对3dB定向耦合器做了取点扫描法优化设计,对电压与电极长度之间的关系进行了定量计算。器件经三维BPM仿真表明,在外加电压on和off的情况下,输出端口可分别实现(0.14±0.06)%和(99.95±0.02)%的耦合效率,显示出良好的电光开关功能。There is unique optical-stopping effect with Sn-As2S8 amorphous semiconductors, a new functional device could be designed using it combined with electro-optical crystal. A new kind of Mach-Zehnder interference electro-optical switch using LiNbO3 as substrate, Sn-As2S8 as wave-guided is designed. On the basis of the device design theory and methods, LiNbO3- based Sn-As2S8 polarization-independence and single-mode waveguide is designed, 3dB directional coupler is optimized using check-point scanning method, the relationship between the voltage and the electrode length is studied using quantitative calculation. Device simulation with three-dimensional BPM shows that in the absence of voltage, the coupled efficiency is （99. 95-±0. 02）%. In voltage, the coupled efficiency is （0. 14±0. 06）%. Electro-optical switching function is achieved well on this device.

关 键 词：集成光学 光开关 掺锡硫化砷波导 铌酸锂 

分 类 号：TN252[电子电信—物理电子学]