射频磁控溅射制备SiO_2防离子反馈膜工艺探讨  

Preparation of SiO_2 ion barrier film with RF magnetron sputtering

作　　者：孙鹏凯[1] 

机构地区：[1]长春大学理学院,吉林长春130022

出　　处：《长春大学学报》2009年第6期57-59,共3页Journal of Changchun University

摘　　要：利用射频磁控溅射方法,在微通道板输入面上做出了性能满足使用要求的SiO2防离子反馈膜。对防离子反馈膜进行了理论分析,对所制备的SiO2防离子反馈膜进行了电子透过率测试。In this paper, we use RF magnetron sputtering method and succeed in preparation of SiO2 ion barrier film that meets the requirements of application on MCP surface. We analyze the ion barrier film in theory, and the electron transmittance test has been conducted on the SiO2 ion barrier film prepared.

关 键 词：微通道板 二氧化硅 防离子反馈膜 

分 类 号：O484[理学—固体物理]