有机共轭聚合物材料中的齐纳隧穿  

Zener Tunneling in Conjugated Polymers

作　　者：张玉华[1,2] 刘文[1] 刘德胜[1] 

机构地区：[1]山东大学物理学院,山东济南250100 [2]山东潍坊教育学院,山东潍坊262500

出　　处：《济南大学学报（自然科学版）》2009年第4期380-384,共5页Journal of University of Jinan(Science and Technology)

基　　金：国家自然科学基金(10574082);山东省自然科学基金(Z2005A01)

摘　　要：基于扩展的SSH模型,采用非绝热动力学方法,研究高电场下一维有机共轭聚合物的电性质。发现在足够高的电场下,价带中的电子可以穿过带隙进入导带,即有机聚合物中的齐纳隧穿现象。伴随电子的带间隧穿,带隙消失,发生从绝缘体(半导体)到金属的相变(I-M相变),晶格结构同时发生重大变化。Tunneling effect in one-dimensional conjugated polymers in the presence of an external electric field is studied within the framework of the tight-binding model and the nonadiabatic dynamical method. It is found that in a high electric field electrons can transit from the valence band to the conduction band, which is demonstrated to be Zener tunneling in organic semiconductors. The results also indicate a field-induced insulator-metal transition accompanied by the vanishing of the energy gap.

关 键 词：齐纳隧穿 共轭聚合物 电场 

分 类 号：O469[理学—凝聚态物理]