Pt/HgInTe肖特基红外探测器的抗辐照特性  

Anti-irradiation characteristics of Pt/HgInTe Schottky infrared detectors

作　　者：张小雷[1] 孙维国[1] 鲁正雄[1] 张亮[1] 赵岚[1] 丁嘉欣[1] 

机构地区：[1]中国空空导弹研究院,河南洛阳471009

出　　处：《红外与激光工程》2009年第3期406-409,共4页Infrared and Laser Engineering

基　　金：国际科技合作计划项目(2004DFB03400)

摘　　要：碲铟汞Hg3In2Te6是(In2Te3)x-(Hg3Te3)1-x(x=0.5)的化合物,被称为缺陷相化合物。为了研究γ辐照对碲铟汞肖特基红外探测器的影响,首先运用直流平面磁控溅射技术在单晶HgInTe表面形成了Pt/Hg3In2Te6接触,然后对HgInTe晶片及其制作的Pt/HgInTe肖特基器件用不同剂量的γ射线进行辐照,利用I-V测试仪对其辐照前后的I-V特性进行测量,得到了辐照前后的反向漏电流,利用傅里叶红外光谱仪对辐照前后的响应光谱进行了对比,发现在短波方向响应光谱随辐照剂量的增大明显下降,但辐照剂量对于峰值波长的位置和截止波长的位置基本上没有明显影响,同时对辐照前后器件的探测率进行了对比,发现探测率随着辐照剂量的增大有所下降,但下降幅度和器件本身性能有关。最后对γ辐照引起探测器性能变化的辐照损伤机制进行了探讨,认为HgInTe在辐照剂量达到1×108rad(Si)时,其性能也没有数量级的变化,具有很好的抗辐照特性。Mercury-indium telluride Hg3In2Te6 corresponds to the composition x = 0.5 of system （In2Te3）x-（Hg3Te3）1-xand belongs to the so-called ＂defect phases＂. To study the effect of γ irradiation on the HgInTe Schottky contact,the Pt/HgInTe Schottky device was fabricated using direct current magnetron sputter deposition.And then the HgInTe material and its photoconductive device were irradiated with different doses.The I-V characteristic and resver leakage current were measured before and after irradiation.With the accumulation of the dose,the response spectrum kept decreasing at short wave band tested by Fourier spectrometer.However,the irradiation dose hardly affected the position of the peak value and cutoff wavelength.The normalized detectivity D＊ showed some decrease with the accumulation of the dose.The mechanism of irradiation damage of detectors wasdiscussed. It is found that the RT Hg3In2Te6 photodiodes haven＇t order of magnitude change on the device performance even when the irradiation is up to 1×10^8 rad （Si） and the anti- irradiation ability is fine.

关 键 词：Γ射线辐照 Hg3In2Te6 肖特基接触 响应光谱 归一化探测率 

分 类 号：TN303[电子电信—物理电子学] TN304.26