CoFe/Cu/CoFe/IrMn自旋阀结构多层膜磁化反转过程的研究  

Investigation of the magnetization reversal processes in CoFe/Cu/CoFe/IrMn spin valve multilayer

作　　者：祁先进[1] 王寅岗[1] 周广宏[1] 李子全[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏南京210016

出　　处：《功能材料》2009年第7期1084-1086,1093,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50671048)

摘　　要：通过高真空直流磁控溅射的方法制备了结构为//Ta(5nm)/Co75Fe25(5nm)/Cu(2.5nm)/Co75Fe25(5nm)/Ir20Mn80(12nm)/Ta(8nm)的顶钉扎自旋阀结构多层膜,研究了磁场循环次数、反向饱和场等待时间和磁场变化率对自旋阀结构多层膜磁化反转过程的影响。结果表明,磁场循环次数和反向饱和场等待时间对自由层的磁化反转过程没有影响,而在被钉扎层中出现了练习效应和时间效应;磁场变化率对被钉扎层和自由层的前、后支反转场的影响变化趋势相似,但反铁磁层对被钉扎层的反转有一定的影响。The CoFe/Cu/CoFe/IrMn spin valve multilayer was deposited by high vacuum magnetron sputtering on silicon wafer substrates, the influences of the number of magnetic field cycles, waiting time at negative saturation, and magnetic field sweep rate on magnetization reversal processes were investigated. Results show that training effect and waiting time effect can be observed in the pinned layer while not in the free layer. The magnetic field sweep rate dependence of the switching field in the descending curves and in the ascending curves of the free layer is nearly the same as that of the pinned layer, but the antiferromagnetic layer exerts some effect on the magnetization reversal processes of the pinned layer.

关 键 词：自旋阀 交换偏置场 磁化反转 热激活 稳定性 

分 类 号：O484.4[理学—固体物理]