中温烧结耐高温陶瓷电容的制备及性能研究  

Studies on Fabrication and Properties of High Temperature Ceramic Capacitors Sintered at Intermediate Temperature

作　　者：裴贞林[1] 袁颖[1] 张树人[1] 李波[1] 

机构地区：[1]电子科技大学微电子与固体电子学院电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《材料导报（纳米与新材料专辑）》2009年第1期366-369,共4页

基　　金：国家“973”计划重大项目

摘　　要：在BaTiO3（BT）BNT-Nb2O5-Zn系统中改变Nb、Zn掺杂量，对BTBNT-Nb-Zn进行介电性能研究，以期获得中烧耐高温陶瓷电容。研究发现，NbwO5、ZnO对BTBNT-Nb2O5-ZnO陶瓷介电性能以及电容量温度变化曲线的影响主要体现在居里温度和居里峰的变化。它们的改性机理可用掺杂后晶粒壳与晶粒芯体积分数的变化来解释。对比不同掺杂后钛酸钡陶瓷的SEM照片可以得出：陶瓷的室温介电常数与掺杂后钛酸钡陶瓷的晶粒生长情况密切相关。Different dosages of Nb2O5 ,ZnO are doped into BaTiOa （BT） BNT-Nb2O3-ZnO system in order to obtain the high temperature ceramic materials sintered at intermediate temperature. The results of experiment reveals that, the effects on variation of capacitance with temperature and dielectric temperature properties demonstrate in the change of Curie temperature and Curie peak. The different doping effects of Nb2O5,ZnO on the temperature and capacitance variation of BT ceramics can be explained by the change of the volume fraction of grain core and grain shell in the core-shell structure. The SEM photos corresponding to the typical Nb2O5, ZnO dope BT ceramics prove that the dielectric constant has close relationship with the grain size of BT ceramics.

关 键 词：钛酸钡 掺杂 电容量温度变化率 介电常数温度特性 

分 类 号：TQ174.758[化学工程—陶瓷工业] TM53[化学工程—硅酸盐工业]