Cu在Pt(111)面上电结晶的成膜过程研究  

STUDY ON THE PROCESS OF COPPER ELECTRODEPOSITION ON PLATINUM (111)

作　　者：印仁和[1] 曹为民[1] 施文广[1] 孙洁林[2] 毛秉伟[3] 孙世刚[3] 

机构地区：[1]上海大学化学系,上海嘉定201800 [2]中国科学院原子核研究所,上海嘉定201800 [3]厦门大学固体表面物理化学国家重点实验室,厦门361005

出　　处：《金属学报》1998年第8期892-896,共5页Acta Metallurgica Sinica

基　　金：国家自然科学基金!59471060;厦门大学固体表面物理化学国家重点实验室;中国科学院原子核分析研究室资助

摘　　要：采用0．001mol／LCuSO4＋0．5mol／LH2SO4溶液体系，在Pt单晶球电极作循环伏安曲线，得到Cu存在欠电位沉积和本体沉积两个阶段，利用电化学扫描隧道显微镜观察到在欠电位下Cu在Pt（111）面上为单层平面生长，本体沉积为三维岛状生长，并随过电位升高，Cu的成核数目增加．用反射电子显微镜法也观察到高过电位时在Pt（111）面上的岛状铜．C-V curves of copper electrodeposition on Pt(111) showed that there were two stages of underpotential and bulk deposition for copper electrodeposition process. Single layer growth at underpotential deposition and three dimensional nucleation growth at bulk deposition had been in situ observed by electrochemical scanning tunneling microscopy (ECSTM) at different potentials and times. The reflection electron microscopy (REM) images also revealed three dimensional growth of Cu deposition at high overpotential. All of these results demonstrated Stranski-Krastanov growth mechanism of copper on Pt(111).

关 键 词：欠电位沉积 ECSTM REM 铜 铂 薄膜 S-K生长 

分 类 号：O484[理学—固体物理]