Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs  

作　　者：邓小川 冯震 张波 李肇基 李亮 潘宏菽 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China [2]The National Key Laboratory of ASIC

出　　处：《Chinese Physics B》2009年第7期3018-3023,共6页中国物理B（英文版）

基　　金：Project supported by Major State Basic Research Development Program of China (Grant No 51327010101)

摘　　要：This paper reports that multi-recessed gate 4H-SiC MESFETs （metal semiconductor filed effect transistors） with a gate periphery of 5-mm are fabricated and characterized.The multi-recessed region under the gate terminal is applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device.The experimental results demonstrate that microwave output power density,power gain and power-added efficiency for multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%, 1.1dB and 7% higher than those of conventional devices fabricated in this work using the same process.This paper reports that multi-recessed gate 4H-SiC MESFETs （metal semiconductor filed effect transistors） with a gate periphery of 5-mm are fabricated and characterized.The multi-recessed region under the gate terminal is applied to improve the gate-drain breakdown voltage and to alleviate the trapping induced instabilities by moving the current path away from the surface of the device.The experimental results demonstrate that microwave output power density,power gain and power-added efficiency for multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed gate structure are about 29%, 1.1dB and 7% higher than those of conventional devices fabricated in this work using the same process.

关 键 词：multi-recessed microwave power 4H-SiC MESFETs 

分 类 号：TN386[电子电信—物理电子学] TQ174.758[化学工程—陶瓷工业]