A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er^(3+) ions  

作　　者：丁武昌 刘艳 张云 郭剑川 左玉华 成步文 余金中 王启明 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2009年第7期3044-3048,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No 60336010);the Major State Basic Research Program of China (Grant Nos 2006CB302802 and 2007CB613404)

摘　　要：This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,the films were implanted with Er^3＋ at different doses.Er-doped thermal grown silicon oxide films were prepared at the same time as references.Photoluminescence features of Er^3＋ were inspected systematically.It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe.However,a very high annealing temperature up to 1200℃ is needed to optically activate Er^3＋,which may be the main obstacle to impede the application of Er-doped silicon nitride.This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,the films were implanted with Er^3＋ at different doses.Er-doped thermal grown silicon oxide films were prepared at the same time as references.Photoluminescence features of Er^3＋ were inspected systematically.It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe.However,a very high annealing temperature up to 1200℃ is needed to optically activate Er^3＋,which may be the main obstacle to impede the application of Er-doped silicon nitride.

关 键 词：Er doping silicon nitride PHOTOLUMINESCENCE 

分 类 号：TN304[电子电信—物理电子学]