Thermal stability of Mg_2 Si epitaxial film formed on Si(111) substrate by solid phase reaction  

作　　者：王喜娜 王勇 邹进 张天冲 梅增霞 郭阳 薛其坤 杜小龙 张晓娜 韩晓东 张泽 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences [2]Faculty of Physics & Electronic Technology,Hubei University [3]School of Engineering and Centre for Microscopy and Microanalysis,The University of Queensland,St Lucia,QLD 4072,Australia [4]Beijing University of Technology

出　　处：《Chinese Physics B》2009年第7期3079-3083,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation (Grant Nos 50532090,60606023 and 60621091);the Ministry of Science and Technology of China (Grant Nos 2002CB613502 and 2007CB936203);Australia Research Council

摘　　要：A single crystalline Mg2Si film was formed by solid phase reaction （SPR） of a Si（111） substrate with an Mg overlayer capped with an oxide layer（s）,which was enhanced by post annealing from room temperature to 100℃ in a molecular beam epitaxy （MBE） system.The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300℃,450℃ and 650℃,respectively.The Mg2Si film stayed stable until the annealing temperature reached 450℃ then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.A single crystalline Mg2Si film was formed by solid phase reaction （SPR） of a Si（111） substrate with an Mg overlayer capped with an oxide layer（s）,which was enhanced by post annealing from room temperature to 100℃ in a molecular beam epitaxy （MBE） system.The thermal stability of the Mg2Si film was then systematically investigated by post annealing in an oxygen-radical ambient at 300℃,450℃ and 650℃,respectively.The Mg2Si film stayed stable until the annealing temperature reached 450℃ then it transformed into amorphous MgOx attributed to the decomposition of Mg2Si and the oxidization of dissociated Mg.

关 键 词：MG2SI solid phase reaction thermal stability 

分 类 号：TN304.054[电子电信—物理电子学]