低维异质结构光存储单元的等效电路建模及模型  

An Equivalent Circuit Model and Its Readout IC Design of a Quantum Dot-Quantum Well Hybrid Structure Optical Memory Cell

作　　者：李峻蔚[1] 詹国钟[1] 郭方敏[1] 

机构地区：[1]华东师范大学信息学院,极化材料与器件教育部重点实验室,上海200241

出　　处：《红外技术》2009年第7期386-389,共4页Infrared Technology

基　　金：科技部重大项目(2006CB932802);上海市科委配套(078014194)

摘　　要：通过新型量子点-量子阱混合异质结构的光存储单元的实际测试结果进行了等效电路建模,运用模型描述响应电流与偏置电压以及器件电容与偏置电压之间的关系。将该新型光子存储器件的实验数据与建模仿真结果进行了对比,发现两者能较好地吻合,从而验证了等效电路模型的正确性。该模型用于实现对该光存储器件器响应信号的匹配读出,对该类型光电器件读出电路的研究具有指导作用。An Equivalent Circuit model of a optical memory cell based on semiconductor quantum dot-quantum well hybrid structure is proposed in this article. We use this model to describe the relation between the bias voltage and current （I-V） and also the bias voltage and capacitance （C-V）. The circuit model could optimize the structure of the circuit and could be linked with the readout circuit. According to the comparison between the simulation result and the experimental result by testing, we could find they are in good agreement, which proving the correctness of the Equivalent circuit model. The signification of this Equivalent circuit model is to design an optimal readout circuit （ROIC） for the novel kind of optical memory cell.

关 键 词：光存储单元 混合异质结构 等效电路模型 读出电路(ROIC) 

分 类 号：TN215[电子电信—物理电子学]