Cu掺杂La_(0.67)Sr_(0.33)Cu_xMn_(1-x)O_3薄膜的光诱导效应研究  

Photoinduced effect in Cu doping La_(0.67)Sr_(0.33)Cu_xMn_(1-x)O_3 thin films

作　　者：金克新[1] 赵省贵[1] 陈长乐[1] 

机构地区：[1]西北工业大学凝聚态结构与性质陕西省重点实验室,西安710072

出　　处：《物理学报》2009年第7期4953-4957,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50331040和50702046);西北工业大学翱翔之星项目资助的课题~~

摘　　要：分别采用溶胶-凝胶和射频磁控溅射的方法制备了La0.67Sr0.33CuxMn1-xO3(x=0.05,0.10和0.15)系列块材和薄膜,研究了Cu部分替代对薄膜光诱导特性的影响.实验结果表明随着Cu掺杂量的增加,薄膜的金属-绝缘转变温度向低温方向移动,且导电性降低.在金属相激光作用诱导电阻增大.光致电阻相对变化极大值随着Cu含量的增加而增大,当x=0.15时,光致电阻相对变化极大值达到58.3%,分析可能是由激光辐照诱导电子束缚于CuO2链外的局域态和晶格效应共同作用的结果.The compounds and films of La0.67Sr0.33CuxMn1-xO3 （ X = 0.05, 0.10, and 0.15） were prepared using the sol-gel technique and an RF magnetron sputtering method, respectively. The effect of Cu doping on the photoinduced properties of La0.67Sr0.33CuxMn1-xO3 films was investigated. Experimental results indicate that the increasing Cu doping content leads to a decrese of the insulator-metal transition temperature and an increase of the resistance. The laser irradiation induces an increase of the resistance in the metallic state. The maximum values of the photoinduced relative change in the resistance increase with increasing x, and it reaches 58.3% at x = 0.15. The intriguing mechanism of the photoinduced effect on the resistance was discussed, which may be the photoinduced electrons being trapped at a localized state outside the CuO2 planes in combination with and the lattice effect.

关 键 词：锰氧化物 光诱导 CU掺杂 晶格效应 

分 类 号：O484.41[理学—固体物理]