ZnO/α-Al_2O_3界面结构的掠入射X射线衍射研究  

Study on ZnO/α-Al_2O_3 interface structure by X-ray grazing incident diffraction

作　　者：孙柏[1,2] 康朝阳[1] 李锐鹏[1] 刘忠良[1] 唐军[1] 徐彭寿[1] 潘国强[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029 [2]中国科学院合肥智能机械研究所,合肥230031

出　　处：《核技术》2009年第7期492-496,共5页Nuclear Techniques

基　　金：国家自然科学基金资助课题(50532070)资助

摘　　要：采用脉冲激光沉积(PLD)技术,以α-Al2O3(001)为衬底,在不同衬底温度下制备ZnO薄膜。利用X射线衍射(XRD)和同步辐射掠入射X射线衍射(GID)研究了薄膜的结晶性能和薄膜与衬底的界面结构。实验结果表明,在衬底温度较低(450℃)时,ZnO薄膜主要受衬底拉应力的作用,使界面处a方向的晶格常数增大;而在衬底温度较高(750℃)时,ZnO薄膜主要受衬底压应力的作用,使界面处a方向的晶格常数减小;在优化的衬底温度(650℃)下,ZnO薄膜受到的衬底应力较小,结晶性最好。且ZnO薄膜垂直方向的晶格排列要比面内的晶格排列更有序。ZnO thin films were grown on α-Al2O3（001） substrates at different temperatures by pulsed laser deposition （PLD）. X-ray diffraction （XRD） and synchrotron radiation X-ray grazing incident diffraction （GID） were employed to study the crystalline quality and interface structure of the ZnO film on α-Al2O3（001 ）. The results show that at lower temperature （450℃）, the films are forced by the tensile stress of the substrate, which leads to increased lattice constant a near the interface. At the higher temperature （750℃）, the films are forced by the pressure stress of the substrate, which leads to decreased lattice constant a near the interface. At the optimized temperature （650℃）, the films are forced by the least stress of the substrate, hence the best crystalline quality of ZnO thin film. We also find that the lattice alignment of the vertical direction is more order than that of the plane.

关 键 词：ZNO PLD α-Al2O3(001)衬底 掠入射衍射 同步辐射 

分 类 号：O484[理学—固体物理] TN304[理学—物理]