Novel approach for characterizing the specific shunt resistance caused by the penetration of the front contact through the p-n junction in solar cell  

作　　者：张陆成 沈辉 

机构地区：[1]Institute for Solar Energy Systems Sun Yat-Sen University

出　　处：《Journal of Semiconductors》2009年第7期67-69,共3页半导体学报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(No.2006AA05Z409);the PhD Program Foundation of the Ministry of Education of China (No. 4111283)

摘　　要：Shunt can drastically decrease the solar cell conversion efficiency and its current measurement result only reflects the overall shunting effect of all shunts in a whole cell.In order to accurately characterize local shunts caused by the penetration of front contacts through the emitter junction, silicon solar cells with a new structure named beam bridge contact were fabricated.The result showed that the region under the emitter was more badly shunted than the other emitter regions.The sample preparation process was completely compatible with the industrial silicon fabrication sequence, which was of great convenience.The measurement results give informations on the solar cell structure, material ingredients, and process parameters.Shunt can drastically decrease the solar cell conversion efficiency and its current measurement result only reflects the overall shunting effect of all shunts in a whole cell.In order to accurately characterize local shunts caused by the penetration of front contacts through the emitter junction, silicon solar cells with a new structure named beam bridge contact were fabricated.The result showed that the region under the emitter was more badly shunted than the other emitter regions.The sample preparation process was completely compatible with the industrial silicon fabrication sequence, which was of great convenience.The measurement results give informations on the solar cell structure, material ingredients, and process parameters.

关 键 词：solar cell shunt resistance MEASUREMENT 

分 类 号：TM914.4[电气工程—电力电子与电力传动]