2×2 InP/InGaAsP MMI-MZI型光开关设计与实验  

Design and Fabrication of 2×2 InP/InGaAsP MMI-MZI Optical Switch

作　　者：杨长屹[1] 黄永清[1] 黄辉[1] 马琼芳[1] 任晓敏[1] 

机构地区：[1]北京邮电大学光通信与光波技术教育部重点实验室,北京100876

出　　处：《电子器件》2009年第3期485-488,共4页Chinese Journal of Electron Devices

基　　金：国家"973"项目资助(2003CB314901);高等学校学科创新引智计划资助(B07005);教育部"长江学者和创新团队发展计划资助(IRT0609);北京市教育委员会共建项目资助(XK100130637);国家"863"计划项目资助(2007AA03Z418)

摘　　要：主要研究基于多模干涉耦合器(MMI)的2×2 InP/InGaAsP马赫曾德型(MMI-MZI)光开关。开关的特性采用BPM(光束传输法)进行器件建模、参数分析与性能优化。开关的结构按照传输波导保证单模传输、低偏振敏感要求进行了设计。光开关通过载流子电注入产生的载流子吸收和带填充效应改变移相臂传输光相位。实验测得光开关在控制电压为6.4V时可实现交叉态到直通态的倒换,开关和关态串扰分别为-20.49dB、-19.19dB。这种开关具有结构紧凑、制作容差大和偏振无敏感等优点,它可以很方便地和其它半导体有源器件集成,在未来DWDM系统中有着非常广泛的应用前景。This paper mainly researches on InGaAsP/InP 2 X 2 Mach-Zehnder interferometer （MZI） optical switch based on multimode interference （MMI） couplers. The switch characteristics were simulated using a three-dimensional beam propagation model. The switch structure was designed to be single mode operation and insensitive to polarization. This optical switch is compact and has large fabrication tolerance. The light signal can be switched from cross port to bar port with a control voltage of 6.4 V by carrier modulation on the principle of injection free carriers, bend-filling effects. The measured crosstalk is -20.49 dB and -19.19 dB at the on and off state, respectively. This optical switch can be easily integrated with other active devices and has potential application in future DWDM systems.

关 键 词：马赫曾德开关 多模干涉耦合器 InP/InGaAsP 光开关 

分 类 号：TN32[电子电信—物理电子学]