片上螺旋电感集总模型中衬底因子的分析与拟合  

Extraction and Analysis of Substrate Parameters in On-Chip Spiral Inductor Lumped Model

作　　者：陈大为[1] 石艳玲[1] 李曦[1] 王鹏[1] 刘婧[1] 丁艳芳[1] 

机构地区：[1]华东师范大学信息科学技术学院电子系,上海200062

出　　处：《电子器件》2009年第3期550-553,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助(60676047;60606010);上海市科委项目资助(075007033;08706200802)

摘　　要：石英、高阻SOI、高阻硅等衬底上实现的电感具有比低电阻率衬底的电感更优的高频性能,因而研究基于不同衬底的电感性能,并在高频模型中进行精确的衬底因子表征就显得十分重要。综合考虑高频下的趋肤效应和邻近效应及衬底电磁损耗对电感性能的影响,实现了片上螺旋电感的集总元件模型,并通过与SOI、石英衬底的电感仿真参数及高阻硅衬底的电感测试参数进行了模型验证,结果表明,该模型拟合的S参数及Q值曲线能与仿真及测试结果吻合,同时模型中衬底因子的提取值与衬底性质相符合,因而该模型适用于片上电感的模拟与设计。Inductors on high resistivity substrate, such as quartz or high resistivity silicon （HR-Si）, can get better Q factor than those on low resistivity substrate. That makes it necessary to research the substrate influence on inductors. In this paper, a lumped element model for on-chip inductor is presented that includes skin and proximity effects, substrate electric and magnetic losses at high-frequency range. This proposed model has been verified both with the simulation results of induetors on quartz substrate and SOI substrate and with the experimental results of square spiral inductors with various geometrical configurations on high-resistivity silicon substrate. These all show good agreements under self-resonance frequency. This model can be easily used in circuit simulations and optimization design.

关 键 词：片上螺旋电感 集总模型 衬底因子 趋肤效应和邻近效应 

分 类 号：TM55[电气工程—电器]