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机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054
出 处:《压电与声光》2009年第4期559-561,共3页Piezoelectrics & Acoustooptics
基 金:国家自然科学基金资助项目(50772019)
摘 要:采用脉冲激光沉积(PLD)法,在制备有SrRuO3底电极的SrTiO3(001)基片上生长高质量的NiFe2O4/Pb(Zr0.52Ti0.48)O3双层复合磁电薄膜。用X-射线衍射(XRD)对复合薄膜的微结构进行详细表征,结果表明,复合薄膜中NiFe2O4、Pb(Zr0.52Ti0.48)O3结晶良好,且具有单一的面外取向,Φ扫描模式显示NiFe2O4、Pb(Zr0.52Ti0.48)O3均延SrTiO3(001)方向外延生长。磁电性能表征结果表明,由于界面应力效应的作用,复合薄膜的铁电性较单层Pb(Zr0.52Ti0.48)O3明显减弱,而铁磁性基本保持NiFe2O4的软磁特性。High quality magnetoelectric bilayer film was deposited on SrTiO3 (001) substrate with SrRuO3 as the bottom electrodes by pulse laser deposition (PLD). The microstructure of the film was precisely analyzed by the X- ray diffraction. The results showed that the film was crystallized very well and has pure out-face orientation. The scanning mode indicated than both the Pb(Zr0.52Ti0. 48 )O8 and the NiFe2O4 were grown along the (001) epitaxial orientation. The magnetoelectric feature charactrization indicated that the ferroelectric property of the composite film was weaker than PZT single-layer films while the ferromagnetism could remain the soft magnetism of NiFe2O4. It can be attributed to the interfaeial strain between NiFe2O4 and Pb(Zr0.52 Ti0.48 )O3.
关 键 词:铁酸镍 锆钛酸铅 脉冲激光沉积(PLD) 磁电复合薄膜
分 类 号:TN304.055[电子电信—物理电子学] O484[理学—固体物理]
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