金属膜电阻器用高阻靶材制备工艺研究  

Investigation on Preparation of the Target for Metal Film Resistor with High Resistance

作　　者：王秀宇[1] 张之圣[1] 白天[1] 刘志刚[1] 毕大鹏[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《压电与声光》2009年第4期582-584,588,共4页Piezoelectrics & Acoustooptics

基　　金：天津市科技攻关培育基金资助项目(06YFGPX08400)

摘　　要：金属膜电阻器用的靶材是影响膜质量和电阻器性能的重要因素之一,晶粒细化是炼制致密性靶材的关键。晶粒细化不仅有利于Cr-Si靶材内部组织均匀化,且能降低其韧脆转变温度,从而使炼制的靶材强度和硬度高、塑性好,提高靶材的成品率。分析了晶粒细化提高靶材综合性能的原因,并介绍了研究中所采用的Ti细化剂、磁力搅拌等晶粒细化措施。实验表明,在RJ24生产线上溅射的1 MΩ金属膜电阻器具有较好的性能,且电阻温度系数均小于20×10-6/℃。The target for metal film resistor is one of the important factors influencing the quality of metal film and the properties of resistor. The grainrefinement is the key to manufacture tight target. Grainrefining is not only in favor of underlying tissues uniformization of Cr-Si target, but also lowers transition temperature between toughness and brittleness, and makes the target manufactured with high intensity and hardness, good plasticity, which will help to improve the rate of finished targets. In the paper the reason is analyzed on grainrefinement improving combination property of target, and the grainrefining measures taken in the experiment, such as grainrefiner Ti added,electromagnetic stirring and so on,are introduced. Experiment shows mental film resistors with resistance 1 MΩ,sputtered on RJ24 production line,have better combination property, and the temperature coefficient of resistance （TCR） is less than 20×10^-6/℃.

关 键 词：金属膜电阻器 电阻温度系数 磁控溅射 Cr-Si高阻靶材 晶粒细化 

分 类 号：TN104[电子电信—物理电子学]