Modeling and Parameters Extraction Technique for the MOSFETs at Liquid Nitrogen Temperature  

作　　者：YI Yangbo GE Zhe LI Haisong SUN Weifeng SHI Longxing 

机构地区：[1]National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China

出　　处：《Chinese Journal of Electronics》2009年第2期215-219,共5页电子学报（英文版）

摘　　要：In this paper, a SPICE sub-circuit model is presented for 0.5μm MOSFETs at liquid nitrogen temperature （77K）. The voltage-dependent resistors τg （Vgs） and rd （Vds） are introduced to model the freeze-out effect, which can＇t be solved by BSIM3. The detailed parameters extraction technique has also been suggested. The modeling results show a good agreement with the experimental results, which proves the proposed model and parameters extraction technique are significative and can be applied in the low temperature circuit design.

关 键 词：SPICE model Sub-circuit model Low temperature Parameter extraction 

分 类 号：TN386.1[电子电信—物理电子学] U237[交通运输工程—道路与铁道工程]