固溶体半导体Zn_(1-x)Mg_xS薄膜性质研究  

Property Characterization of Solid-Solution Semiconductor Zn_(1-x)Mg_xS Films

作　　者：朱汉明[1] 苗银萍[1] 孙汪典[1] 

机构地区：[1]暨南大学物理系,广州510632

出　　处：《真空科学与技术学报》2009年第4期355-358,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：以ZnS、Mg粉末为原料,应用双源真空蒸镀法,在石英玻璃衬底上成功地制备了不同Mg含量x的三元固溶体半导体Zn1-xMgxS薄膜。根据薄膜的X射线能量色散谱、X射线衍射谱和紫外-可见吸收光谱,由Vegard定律得到在实验范围内不同Mg含量x的薄膜晶格常数a与x的关系可表达为a(x)=0.53965-0.01415x(nm);薄膜的光学带隙Eg与x的关系可表达为Eg(x)=0.853x2+0.086x+3.662(eV)。The solid-solution semiconductor Zn1-xMgxS thin films were grown by vacuum co-evaporation of ZnS and Mg powders on quartz glass substrate. The influence of the film growth conditions and Mg content on the micmstructures of the Zn1-xMgxS films was studied. Its electronic structures were characterized with X-ray diffraction （XRD）, X-ray energy dispersive spectroscopy （EDS） and ultraviolet visible （UV-Vis） absorption spectroscopy. The results show that the stoichiometry of Mg, x, in the Zn1-xMgxS films significantly affects the lattice constant, a, and the optical energy gap, Eg, of the Zn1-x MgxS films. By using Vegard law, two equations were experimentally derived： a （x） = 0.53965 -0.01415x （nm） and Eg（x） = 0.853x2 ＋ 0.086x ＋ 3.662（eV）.

关 键 词：固溶体半导体 Zn1-xMgxS薄膜 晶格常数 光学带隙 

分 类 号：O484.1[理学—固体物理]